628 citations · 969 across the 5 of their papers we have counts for
5 papers
SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training
Puyang Huang, Yu Gu, Chenyi Fu +10
We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications…
A Read Margin Enhancement Circuit with Dynamic Bias Optimization for MRAM
Renhe Chen, Albert Lee, Zirui Wang +2
This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the r…
Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB
Puyang Huang, Aitian Chen, Jianting Dong +9
Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative t…
Precise quantization of anomalous Hall effect near zero magnetic field
A. J. Bestwick, E. J. Fox, Xufeng Kou +3
We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure…
Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
Xufeng Kou, Shih-Ting Guo, Yabin Fan +12
We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magn…