activity
20142024
most citedSilicon-carbon bond inversions driven by 60 keV electrons in graphene

150 citations · 413 across the 6 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci202326 cited

Combined electronic excitation and knock-on damage in monolayer MoS2

Carsten Speckmann, Julia Lang, Jacob Madsen +7

Electron irradiation-induced damage is often the limiting factor in imaging materials prone to ionization or electronic excitations due to inelastic electron scattering. Quantifyin…

cond-mat.mtrl-sci2016101 cited

Single-atom spectroscopy of phosphorus dopants implanted into graphene

Toma Susi, Trevor P. Hardcastle, Hans Hofsäss +7

One of the keys behind the success of the modern semiconductor technology has been the ion implantation of silicon, which allows its electronic properties to be tailored. For simil…

physics.ins-det201688 cited

Isotope analysis in the transmission electron microscope

Toma Susi, Christoph Hofer, Giacomo Argentero +5

The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure…

cond-mat.mes-hall201445 cited

Calculation of the graphene C 1 core level binding energy

Toma Susi, Duncan J. Mowbray, Mathias P. Ljungberg +1

X-ray photoelectron spectroscopy (XPS) combined with first principles modeling is a powerful tool for determining the chemical composition and electronic structure of novel materia…

cond-mat.mes-hall2014150 cited

Silicon-carbon bond inversions driven by 60 keV electrons in graphene

Toma Susi, Jani Kotakoski, Demie Kepaptsoglou +8

We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations rev…