140 citations · 1.5k across the 87 of their papers we have counts for
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Approximate Theory of Temperature Coefficient of Resistivity of Amorphous Semiconductors
Ming-Liang Zhang, D. A. Drabold
In this paper, we develop an approximate theory of the temperature coefficient of resistivity (TCR) and conductivity based upon the recently proposed Microscopic Response Method. B…
Temperature Coefficient of Resistivity in Amorphous Semiconductors
Ming-Liang Zhang, David A. Drabold
By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperatu…
The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H
Bin Cai, David A. Drabold
In amorphous materials, acceptor and donor impurities rarely dope the system (shift the Fermi level). We find out why in a-Si:H. We report simulations on B and P doping of a-Si:H a…
Pentagonal puckering in a sheet of amorphous graphene
Y. Li, F. Inam, A. Kumar +2
Ordered graphene has been extensively studied. In this paper we undertake a first density functional study of it topologically disordered analogues of graphene, in the form of a ra…
Atomistic Simulations of Flash Memory Materials Based on Chalcogenide Glasses
Bin Cai, Binay Prasai, D. A. Drabold
In this chapter, by using ab-initio molecular dynamics, we introduce the latest simulation results on two materials for flash memory devices: Ge2Sb2Te5 and Ge-Se-Cu-Ag. This chapte…
The properties of amorphous GaN
Bin Cai, David A. Drabold
In this paper, we present three amorphous GaN models obtained from the first principles simulation. We find that a chemically ordered continuous random network is the ideal structu…