150 citations · 510 across the 8 of their papers we have counts for
5 papers
Single-atom spectroscopy of phosphorus dopants implanted into graphene
Toma Susi, Trevor P. Hardcastle, Hans Hofsäss +7
One of the keys behind the success of the modern semiconductor technology has been the ion implantation of silicon, which allows its electronic properties to be tailored. For simil…
Isotope analysis in the transmission electron microscope
Toma Susi, Christoph Hofer, Giacomo Argentero +5
The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure…
Towards weighing individual atoms by high-angle scattering of electrons
G. Argentero, C. Mangler, J. Kotakoski +2
We consider theoretically the energy loss of electrons scattered to high angles when assuming that the primary beam can be limited to a single atom. We discuss the possibility of i…
Silicon-carbon bond inversions driven by 60 keV electrons in graphene
Toma Susi, Jani Kotakoski, Demie Kepaptsoglou +8
We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations rev…
Imaging Atomic-Level Random Walk of a Point Defect in Graphene
Jani Kotakoski, Clemens Mangler, Jannik C. Meyer
Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstruct…