25 citations · 99 across the 9 of their papers we have counts for
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Determination of InN-GaN heterostructure band offsets from internal photoemission measurements
Zahid Hasan Mahmood, A. P. Shah, Abdul Kadir +4
Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent…
The role of hydrostatic stress in determining the bandgap of InN epilayers
Abdul Kadir, Tapas Ganguli, Ravi Kumar +5
We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavele…
Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system
Abdul Kadir, Tapas Ganguli, Ravi Kumar +4
From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effec…