22 citations · 35 across the 5 of their papers we have counts for
5 papers
Non-intrinsic superconductivity in InN epilayers: role of Indium Oxide
Abdul Kadir, Sourin Mukhopadhyay, Tapas Ganguli +5
In recent years there have been reports of anomalous electrical resistivity and the presence of superconductivity in semiconducting InN layers. By a careful correlation of the temp…
Determination of InN-GaN heterostructure band offsets from internal photoemission measurements
Zahid Hasan Mahmood, A. P. Shah, Abdul Kadir +4
Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent…
Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system
Abdul Kadir, Tapas Ganguli, Ravi Kumar +4
From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effec…
Growth kinetics effects on self-assembled InAs/InP quantum dots
Bhavtosh Bansal, M. R. Gokhale, Arnab Bhattacharya +1
A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics pa…
Another origin of bimodal size distribution in InAs self-assembled quantum dots
Bhavtosh Bansal, M. R. Gokhale, Arnab Bhattacharya +1
The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the on…