Defect density of states of tin oxide and copper oxide p-type thin-film transistors

MÃ¥ns J. Mattsson, Kham M. Niang, Jared Parker +4

The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin ox…