2 papers
physics.app-ph2026
Shallow Trap States Control Electrical Performance of Amorphous Oxide Semiconductor Thin-Film Transistors
MÃ¥ns J. Mattsson, Jinhan Lee, Christopher E. Malmberg +10
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. He…
cond-mat.mtrl-sci2024
Defect density of states of tin oxide and copper oxide p-type thin-film transistors
MÃ¥ns J. Mattsson, Kham M. Niang, Jared Parker +4
The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin ox…