W. Wenckebach

activity

20022005

most citedHot-hole lasers in III-V semiconductors

6 citations · 10 across the 4 of their papers we have counts for

collaborators

Showing cond-matShow all

2 papers · 1 filter

cond-mat2003★ 1 cited

The Hall Effect and ionized impurity scattering in Si $_{(1 - x)}$ Ge $_{x}$

P. Kinsler, W. Th. Wenckebach

Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si $_{(1 - x)}$ Ge $_{x}$ is vital in order to predict the correct Hall parameters. O…

cond-mat2002

Towards quantum well hot hole lasers

P. Kinsler, W. Th. Wenckebach

It should be possible to improve hot-hole laser performance by moving from bulk materials to a quantum well structure. The extra design parameters enable us to alter the band struc…

The Hall Effect and ionized impurity scattering in Si(1−x)​Gex​

Towards quantum well hot hole lasers

The Hall Effect and ionized impurity scattering in Si $_{(1 - x)}$ Ge $_{x}$