The Hall Effect and ionized impurity scattering in Si${}_{(1-x)}$Ge${}_x$

Abstract

Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si${}_{(1-x)}$Ge${}_x$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).

5 pages, 4 figures, 3 tables, 2 authors, and a logo. v2 improved referencing

References in corpus (3)

• Hot-hole lasers in III-V semiconductors
• An optimised algorithm for ionized impurity scattering in Monte Carlo simulations
• The Hall Effect and ionized impurity scattering in Si${}_{(1-x)}$Ge${}_x$

Cited by in corpus (1)

• The Hall Effect and ionized impurity scattering in Si${}_{(1-x)}$Ge${}_x$