From the 1 of 5 linked papers with an AI index.
5 papers
STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)
Tatiana V. Pavlova, Vladimir M. Shevlyuga
The paper combines scanning tunneling microscopy and density functional theory to observe how a single phosphorus atom from PBr3 incorporates into a Si(100) surface, revealing the…
Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state
T. V. Pavlova, V. M. Shevlyuga
Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applicatio…
PBr3 Adsorption and Dissociation on the Si(100) Surface
Vladimir M. Shevlyuga, Yulia A. Vorontsova, Tatiana V. Pavlova
The adsorption of PBr3 on the Si(100)-21 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissoc…
Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface
T. V. Pavlova, V. M. Shevlyuga
Dangling bonds (DBs) are common defects in silicon that affect its electronic performance by trapping carriers at the in-gap levels. For probing the electrical properties of indivi…
Surface diffusion of phosphorus on Si(100) after PBr3 adsorption
T. V. Pavlova, V. M. Shevlyuga
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr mole…