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19922023
most citedUltra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

235 citations · 3.4k across the 102 of their papers we have counts for

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physics.app-ph2020★ 30 cited

Analysis of low-threshold optically pumped III-nitride microdisk lasers

Farsane Tabataba-Vakili, Christelle Brimont, Blandine Alloing +11

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thre…

physics.app-ph2020★ 24 cited

Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Farsane Tabataba-Vakili, Blandine Alloing, Benjamin Damilano +12

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer.…

physics.app-ph2020★ 235 cited

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

A. Elbaz, D. Buca, N. Von den Driesch +15

GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…

physics.app-ph2019★ 20 cited

Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +11

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in…

physics.app-ph2019★ 49 cited

Blue Microlasers Integrated on a Photonic Platform on Silicon

Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +12

The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers in…

physics.app-ph2019★ 9 cited

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Farsane Tabataba-Vakili, Iannis Roland, Thi-Mo Tran +10

III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality…