152 citations · 158 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2014★ 6 cited
The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga2SeTe2 semiconductor alloy
Najeb Abdul-Jabbar, Bora Kalkan, Alastair MacDowell +3
We observe that pressure-induced amorphization of Ga2SeTe2 (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with per…
cond-mat.mtrl-sci2014★ 152 cited
Displacement cascades and defects annealing in tungsten, Part I: defect database from molecular dynamics simulations
Wahyu Setyawan, Giridhar Nandipati, Kenneth J. Roche +3
Molecular dynamics simulations have been used to generate a comprehensive database of surviving defects due to displacement cascades in bulk tungsten. Twenty one data points of pri…