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Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe ultrathin films
Jun-Ping Peng, Jia-Qi Guan, Hui-Min Zhang +5
Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitized SiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth mode and exhibit two dominant…
Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
Cui-Zu Chang, Peizhe Tang, Yi-Lin Wang +11
With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topolo…
Electrically tuned magnetic order and magnetoresistance in a topological insulator
Zuocheng Zhang, Xiao Feng, Minghua Guo +10
The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into T…
Inelastic electron tunneling spectroscopy of nanoporous gold films
H. W. Liu, R. Nishitani, T. Fujita +8
We investigated the localized electronic properties of nanoporous gold films by using an ultra-high vacuum scanning tunneling microscope at low temperature (4.2 K). Second derivati…
Experimental observation of Dirac-like surface states and topological phase transition in PbSnTe(111) films
Chenhui Yan, Junwei Liu, Yunyi Zang +12
The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high quality PbSnT…