123 citations · 205 across the 9 of their papers we have counts for
Showing 2006 · cond-mat.mes-hallShow all
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cond-mat.mes-hall2006
Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]
Michael E. Flatté, Kimberley C. Hall
A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Re…
cond-mat.mes-hall2006
Current-induced spin polarization in nonmagnetic semiconductor junctions
Yunong Qi, Michael E. Flatté
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of…
cond-mat.mes-hall2006★ 123 cited
Performance of a spin-based insulated gate field effect transistor
Kimberley C. Hall, Michael E. Flatté
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of rais…