activity
20242026
collaborators

8 papers

cond-mat.mes-hall2026

Dispersive detection of a charge qubit with a broadband high-impedance quantum-Hall plasmon resonator

Chaojing Lin, Kosei Teshima, Takafumi Akiho +2

Cavity quantum electrodynamics (cQED) provides strong light-matter interactions that can be used for manipulating and detecting quantum states. The interaction can be enhanced by i…

cond-mat.mes-hall2025

Efficient heat-energy conversion from a non-thermal Tomonaga-Luttinger liquid

Hikaru Yamazaki, Masashi Uemura, Haruhi Tanaka +5

Energy harvesting is a technique that generates useful work from waste heat. Conventional energy harvesters acting on local thermal equilibrium states are constrained by thermodyna…

cond-mat.mes-hall2025

Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr(BiSb)Te and V(BiSb)Te Films

Yusuke Nakazawa, Takafumi Akiho, Kiyoshi Kanisawa +3

Here, we study the effects of a GaAs buffer layer on the structural, magnetic, and transport properties of Cr(BiSb)Te magnetic topological insulator thi…

cond-mat.mes-hall2024

Coulomb oscillations of a quantum antidot formed by an airbridged pillar gate in the integer and fractional quantum Hall regime

Tokuro Hata, Hiroki Mitani, Hidetaka Uchiyama +3

Quantum antidots (QAD) are attractive for manipulating quasiparticles in quantum Hall (QH) systems. Here, we form a QAD in the integer and fractional QH regimes at nominal Landau-l…

cond-mat.mes-hall2024

Static quantum dot on a potential hilltop for generating and analyzing hot electrons in the quantum Hall regime

Ryo Oishi, Yuto Hongu, Tokuro Hata +4

We propose and demonstrate a static quantum dot on a potential hilltop to generate and analyze ballistic hot electrons along a quantum Hall edge channel well above the chemical pot…

cond-mat.mes-hall2024

Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge

Takafumi Akiho, Hiroshi Irie, Yusuke Nakazawa +3

We have fabricated a superconductor/semiconductor (S/Sm) junction composed of Al and InAs using cleaved edge overgrowth. By exploiting the unique geometry with a thin Al/Pt/Al tril…