2 citations · 3 across the 10 of their papers we have counts for
10 papers
Low Leakage Ferroelectric Heteroepitaxial AlScN Films on GaN
Keisuke Yazawa, Charles Evans, Elizabeth Dickey +3
Wurtzite (Al,Sc)N ferroelectrics are attractive for microelectronics applications due to their chemical and epitaxial structural compatibility with wurtzite semiconductors such as…
Low-Temperature Synthesis of Stable CaZnP Zintl Phosphide Thin Films as Candidate Top Absorbers
Shaham Quadir, Zhenkun Yuan, Guillermo Esparza +14
The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell pai…
Reliable operation of CrO:Mg/ -GaO p-n heterojunction diodes at 600C
William A. Callahan, Kingsley Egbo, Cheng-Wei Lee +3
-GaO-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applicatio…
NiGaO interfacial layers in NiO/GaO heterojunction diodes at high temperature
Kingsley Egbo, Emily M. Garrity, William A. Callahan +6
NiO/GaO heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…
Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys
Stephen Schaefer, Davi Febba, Kingsley Egbo +3
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such u…
Mechanistically-guided materials chemistry: synthesis of new ternary nitrides, CaZrN and CaHfN
Christopher L. Rom, Andrew Novick, Matthew J. McDermott +13
Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrid…