activity
20032005
most citedCarbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

540 citations · 540 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2005

Oxidation Resistant Germanium Nanowires: Bulk Synthesis, Long Chain Alkanethiol Functionalization and Langmuir-Blodgett Assembly

Dunwei Wang, Ying-Lan Chang, Zhuang Liu +1

A simple method is developed to synthesize gram quantities of uniform Ge nanowires (GeNWs) by chemical vapor deposition on preformed, monodispersed seed-particles loaded onto high…

cond-mat.mtrl-sci2005

Deterministic One-to-One Synthesis of Germanium Nanowires and Individual Gold Nano-Seed Patterning for Aligned Nanowire Arrays

Dunwei Wang, Ryan Tu, Li Zhang +1

It is demonstrated by the current work controlled one-to-one synthesis of Ge nanowires (GeNWs) with ~100% yield from Au seed particles. The optimum GeNW growth conditions are found…

cond-mat.mtrl-sci2004

Surface Chemistry and Electrical Properties of Germanium Nanowires

Dunwei Wang, Ying-Lan Chang, Qian Wang +4

Germanium nanowires with p- and n-dopants were synthesized by chemical vapor deposition and used to construct complementary field effect transistors . Electrical transport and x-ra…

cond-mat.mes-hall2003★ 540 cited

Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

Ali Javey, Jing Guo, Damon B. Farmer +5

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant Hf…

cond-mat.mes-hall2003

Suspended Carbon Nanotube Quantum Wires with Two Gates

Jien Cao, Qian Wang, Dunwei Wang +1

Suspended single-walled carbon nanotube devices comprised of high quality electrical contacts and two electrostatic gates per device are obtained. Compared to nanotubes pinned on s…