5 papers
Review of prototypes developed in a 65 nm CMOS imaging technology in view of vertexing applications at a future lepton collider
Finn King, Matthew Lewis Franks, Yajun He +21
The OCTOPUS project addresses the development and characterization of monolithic active pixel sensors in the TPSCo 65 nm ISC technology in view of vertexing applications at a futur…
The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
Sara Ruiz Daza, Rafael Ballabriga, Eric Buschmann +28
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensor…
Impact of the circuit layout on the charge collection in a monolithic pixel sensor
Corentin Lemoine, Rafael Ballabriga, Eric Buschmann +28
CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors fo…
Transient studies using a TCAD and Allpix Squared combination approach
Manuel A. Del Rio Viera, Eric Buschmann, Ankur Chauhan +22
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density an…
Test Beam Characterization of a Digital Silicon Photomultiplier
Finn King, Inge Diehl, Ono Feyens +8
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and…