most citedImaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy

2 citations · 2 across the 2 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

1 paper · 1 filter

cond-mat.mes-hall2014

Probing limits of STM field emission patterned Si:P -doped devices

M. Rudolph, S. M. Carr, G. Subramania +6

Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…