2 citations · 2 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2014★ 2 cited
Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy
E. Bussmann, M. Rudolph, G. S. Subramania +7
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling…
cond-mat.mes-hall2014
Probing limits of STM field emission patterned Si:P -doped devices
M. Rudolph, S. M. Carr, G. Subramania +6
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…