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20142024
most citedIntegrating Atomic Layer Deposition and Ultra-High Vacuum Physical Vapor Deposition for In Situ Fabrication of Tunnel Junctions

22 citations · 42 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2014★ 22 cited

Integrating Atomic Layer Deposition and Ultra-High Vacuum Physical Vapor Deposition for In Situ Fabrication of Tunnel Junctions

Alan J. Elliot, Gary A. Malek, Rongtao Lu +4

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel juncti…