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Haifeng Yu

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • last author2

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1
  • cond-mat.supr-con1
  • quant-ph1
ORCID 0000-0002-5963-8266
same name
  • Haifeng Yu — 14 papers, h 20
  • Haifeng Yu — 3 papers, h 23
  • Haifeng Yu — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedIntegrating Atomic Layer Deposition and Ultra-High Vacuum Physical Vapor Deposition for In Situ Fabrication of Tunnel Junctions

22 citations · 42 across the 3 of their papers we have counts for

collaborators

3 papers

quant-ph2022★ 19 cited

Control and mitigation of microwave crosstalk effect with superconducting qubits

Ruixia Wang, Peng Zhao, Yirong Jin +1

Improving gate performance is vital for scalable quantum computing. The universal quantum computing also requires the gate fidelity to reach a high level. For superconducting quant…

cond-mat.supr-con2014★ 1 cited

Controlling the thickness of Josephson tunnel barriers with atomic layer deposition

Alan J. Elliot, Chunrui Ma, Rongtao Lu +5

Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for…

cond-mat.mtrl-sci2014★ 22 cited

Integrating Atomic Layer Deposition and Ultra-High Vacuum Physical Vapor Deposition for In Situ Fabrication of Tunnel Junctions

Alan J. Elliot, Gary A. Malek, Rongtao Lu +4

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel juncti…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.