310 citations · 665 across the 11 of their papers we have counts for
9 papers · 1 filter
Ultrafast optically induced magnetic state transition in 2D antiferromagnets
Shuo Li, Junjie He, Thomas Frauenheim
Manipulating spin in antiferromagnetic (AFM) materials has great potential in AFM opto-spintronics. Laser pulses can induce a transient ferromagnetic (FM) state in AFM metallic sys…
Doping isolated one-dimensional antiferro-magnetic semiconductor Vanadium tetrasulfide () nanowires with carriers induces half-metallicity
Shuo Li, Junjie He, Petr Nachtigall +2
Quasi one-dimensional (1D) vanadium tetrasulfide () nanowires (NWs) are synthetic semiconductors which combine with each other through Van der Waals interactions to form bulk…
Remarkably enhanced Curie temperature in monolayer CrI3 by hydrogen and oxygen adsorption: A first-principles calculations
Maedeh Rassekh, Junjie He, Saber Farjami Shayesteh +1
wo-dimensional (2D) materials unique properties and their promising applications in post-silicon microelectronics have attracted significant attention in the past decade. Recently,…
Control of spintronic and electronic properties of bimetallic and vacancy-ordered vanadium carbide MXenes via surface functionalization
Shuo Li, Junjie He, Petr Nachtigall +2
MXenes are 2D transition metal carbides with high potential for overcoming limitations of conventional two-dimensional electronics. In this context, various MXenes have shown magne…
Three-dimensional graphene networks modified with acetylenic linkages for high-performance optoelectronics and Li-ion battery anode material
Chengyong Zhong, Wenxia Zhang, Guangqian Ding +1
Searching for three-dimensional(3D) semiconducting carbon allotropes with proper bandgaps and excellent optoelectronic properties is always the chasing goal for the new emerging al…
NiCl3 Monolayer: Dirac Spin-Gapless Semiconductor and Chern Insulator
Junjie He, Xiao Li, Pengbo Lyu +1
The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, r…
Half-Semiconductor antiferromagnets and Spin-Gapless-Semiconductor antiferromagnets
Junjie He, P. Zhou, N. Jiao +3
We propose a concept of half-semiconductor antiferromagnets in which both spin-polarized valence and conduction bands belong to the same spin channel with completely compensated sp…
Magnetic Exchange Coupling and Anisotropy of 3d Transition-Metal Nanowire on the Surface of Graphyne Sheet
Junjie He, Pan Zhou, N. Jiao +4
Using density functional theory plus Hubbard-U (DFT+U) approach, we find that quasi one-dementation(1D) 3d transition metal(TM) zigzag nanowire can be constructed by TM adsorbed on…
Magnetic Properties of Single Transition-Metal Atom Absorbed Graphdiyne and Graphyne Sheet
Junjie He, ShuangYing Ma, Pan Zhou +3
The electronic and magnetic properties of single 3d transition-metal(TM) atom (V, Cr, Mn, Fe, Co, and Ni) adsorbed graphdiyne (GDY) and graphyne (GY) are systematically studied usi…