39 citations · 116 across the 7 of their papers we have counts for
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physics.ins-det2013★ 10 cited
Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner +2
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transien…
physics.ins-det2013★ 11 cited
Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Julian Becker, Eckhart Fretwurst +3
Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-Si…