39 citations · 116 across the 7 of their papers we have counts for
7 papers
Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC
C. Barth, C. A. Betancourt, I. Bloch +38
While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operati…
Impact of low-dose electron irradiation on n+p silicon strip sensors
The Tracker Group of the CMS Collaboration
The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were perfor…
Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner +2
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transien…
Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Julian Becker, Eckhart Fretwurst +3
Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-Si…
Design of the AGIPD Sensor for the European XFEL
J. Schwandt, E. Fretwurst, R. Klanner +1
For experiments at the European X-Ray Free-Electron Laser (XFEL) the Adaptive Gain Integrating Pixel Detector (AGIPD) is under development. The particular requirements for the dete…
Charge losses in segmented silicon sensors at the Si-SiO2 interface
Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner +3
Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interfa…