Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO${}_3$-SrTiO${}_3$ Interfaces

R. Jany, M. Breitschaft, G. Hammerl +10

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO${}_3$-SrTiO${}_3$ interface, oxide diodes have been fabricated with room-temperature…