21 citations · 57 across the 6 of their papers we have counts for
5 papers · 1 filter
Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires
Danylo Mosiiets, Yann Genuist, Joël Cibert +2
We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is c…
Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires
Marta Orrù, Eric Robin, Martien I Den Hertog +6
The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with C…
Optical properties of single ZnTe nanowires grown at low temperature
Alberto Artioli, Pamela Rueda-Fonseca, Petr Stepanov +11
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and a…
Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexa…
Polarity determination in ZnSe nanowires by HAADF STEM
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The…