21 citations · 57 across the 6 of their papers we have counts for
6 papers
Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires
Danylo Mosiiets, Yann Genuist, Joël Cibert +2
We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is c…
Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires
Marta Orrù, Eric Robin, Martien I Den Hertog +6
The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with C…
Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy
P. Rueda-Fonseca, M. Orrù, E. Bellet-Amalric +6
With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the…
Optical properties of single ZnTe nanowires grown at low temperature
Alberto Artioli, Pamela Rueda-Fonseca, Petr Stepanov +11
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and a…
Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexa…
Polarity determination in ZnSe nanowires by HAADF STEM
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The…