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Giant intrinsic photoresponse in pristine graphene
Qiong Ma, Chun Hung Lui, Justin C. W. Song +14
When the Fermi level matches the Dirac point in graphene, the reduced charge screening can dramatically enhance electron-electron (e-e) scattering to produce a strongly interacting…
N-polar AlN buffer growth by MOVPE for transistor applications
J. Lemettinen, H. Okumura, T. Palacios +1
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-e…
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
J. Lemettinen, H. Okumura, I. Kim +4
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high tem…
Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs under Mist Exposure
M. Fátima Romero, Alberto Boscá, Jorge Pedrós +4
The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility tra…