13 citations · 15 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026★ 2 cited
High-temperature operation of III-nitride high-electron-mobility transistors
Yi-Chen Liu, Jacklyn Zhu, John Niroula +3
High-electron-mobility transistors (HEMTs) made with III-nitride materials are of potential use in high-temperature electronic applications including power electronics, communicati…
cond-mat.mtrl-sci2025★ 13 cited
High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Seungheon Shin, Hridibrata Pal, Jon Pratt +8
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency…