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20122020
most citedIntegrated Circuits Based on Bilayer MoS2 Transistors

1.7k citations · 1.7k across the 6 of their papers we have counts for

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physics.app-ph20208 cited

On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells

Laura Barrutia, IvÁn Lombardero1, Mario Ochoa +6

Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical effi…

physics.app-ph2020

Impact of Passivation on the Photovoltaic Performance of Vertical Schottky Junction Solar Cells

Elaine McVay, Ahmad Zubair, Yuxuan Lin +2

Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high…

physics.app-ph2018

N-polar AlN buffer growth by MOVPE for transistor applications

J. Lemettinen, H. Okumura, T. Palacios +1

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-e…

physics.app-ph2018

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

J. Lemettinen, H. Okumura, I. Kim +4

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high tem…

physics.app-ph2018

Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs under Mist Exposure

M. Fátima Romero, Alberto Boscá, Jorge Pedrós +4

The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility tra…