3 papers
cond-mat.mtrl-sci2026
Demonstration of High-Performance Ultra-Wide Bandgap SrSnO Top-Gated MOSFETs
Junghyun Koo, Weideng Sun, Donghwan Kim +6
We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO (S…
cond-mat.mtrl-sci2025
High-Performance Ultra-Wide-Bandgap CaSnO3 Metal-Oxide-Semiconductor Field-Effect Transistors
Weideng Sun, Junghyun Koo, Donghwan Kim +8
The increasing demand for high-voltage and high-power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates…
physics.app-ph2024
First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window
Seohyeon Park, Jaewook Yoo, Hyeojun Song +8
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer de…