Demonstration of High-Performance Ultra-Wide Bandgap SrSnO${}_3$ Top-Gated MOSFETs

Abstract

We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO${}_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO${}_2$ gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm${}^2$/V$\cdot$s, an on-state current up to 194 mA/mm, an on/off current ratio above $10^8$, and a contact resistance of 0.66 $\Omega \cdot$mm. The devices also show a near-ideal subthreshold slope of 68 mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO${}_3$ as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications.