3 papers
cs.AI2026
2d-fet-bench: from spatial reasoning to fet design on flakes
Dunzhi Zhou, Chengyu Zhu, Gang Qiu +1
Field-effect transistor (FET) layouts on exfoliated two-dimensional flakes are typically drawn by hand for each flake, placing contacts and gates to match its position and outline…
cond-mat.mtrl-sci2026
Demonstration of High-Performance Ultra-Wide Bandgap SrSnO Top-Gated MOSFETs
Junghyun Koo, Weideng Sun, Donghwan Kim +6
We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO (S…
cond-mat.mtrl-sci2025
High-Performance Ultra-Wide-Bandgap CaSnO3 Metal-Oxide-Semiconductor Field-Effect Transistors
Weideng Sun, Junghyun Koo, Donghwan Kim +8
The increasing demand for high-voltage and high-power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates…