From the 1 of 4 linked papers with an AI index.
4 papers
High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC
Yuliya Ermakova, Ekaterina Dmitrieva, Margarita Sadovnikova +5
The paper studies nitrogen and beryllium co‑doped 6H‑SiC using high‑field (94 GHz) continuous‑wave and pulsed EPR and ENDOR to identify defect sites, measure spin coherence times,…
Ce(III) Ions in Hydroxyapatite: Nanoscale Environment Investigation
M. A. Sadovnikova, D. V. Shurtakova, G. V. Mamin +5
This paper presents a comprehensive study of cerium-doped hydroxyapatite (Ce-HAp), a material of interest for biomedical applications due to the good biocompatibility of hydroxyapa…
Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies
F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin +4
High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitroge…
14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin +6
The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei…