activity
20092015
most citedCircuit Quantum Electrodynamics with a Spin Qubit

465 citations · 1.2k across the 9 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2012★ 68 cited

A Radio Frequency Charge Parity Meter

M. D. Schroer, M. Jung, K. D. Petersson +1

We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped element resonator coupled to a single InAs nanowire double qu…

cond-mat.mes-hall2012★ 465 cited

Circuit Quantum Electrodynamics with a Spin Qubit

K. D. Petersson, L. W. McFaul, M. D. Schroer +4

Circuit quantum electrodynamics allows spatially separated superconducting qubits to interact via a "quantum bus", enabling two-qubit entanglement and the implementation of simple…

cond-mat.mes-hall2012★ 44 cited

Radio frequency charge sensing in InAs nanowire double quantum dots

M. Jung, M. D. Schroer, K. D. Petersson +1

We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homo…

cond-mat.mes-hall2011★ 92 cited

Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition

L. D. Alegria, M. D. Schroer, A. Chatterjee +4

We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth…

cond-mat.mes-hall2011★ 150 cited

Field Tuning the G-Factor in InAs Nanowire Double Quantum Dots

M. D. Schroer, K. D. Petersson, M. Jung +1

We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performe…

cond-mat.mes-hall2009★ 138 cited

Correlating the nanostructure and electronic properties of InAs nanowires

M. D. Schroer, J. R. Petta

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect den…

cond-mat.mes-hall2009★ 10 cited

Development and operation of research-scale III-V nanowire growth reactors

M. D. Schroer, S. Y. Xu, A. Bergman +1

III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowi…