576 citations · 5.2k across the 121 of their papers we have counts for
9 papers · 1 filter
Spin-Selective Equilibration among Integer Quantum Hall Edge Channels
G. Nicoli, C. Adam, M. P. Röösli +6
The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with…
Characterization of quasiparticle tunneling in a quantum dot from temperature dependent transport in the integer and fractional quantum Hall regime
Marc P. Röösli, Michael Hug, Giorgio Nicolí +6
We report on magnetoconductance measurements through a weakly coupled quantum dot, containing roughly 900 electrons, in a wide magnetic field range from 0 T to 12 T. We find modula…
Breakdown of the topological protection by cavity vacuum fields in the integer quantum Hall effect
Felice Appugliese, Josefine Enkner, Gian Lorenzo Paravicini-Bagliani +6
The control of the electronic properties of materials via the vacuum fields of cavity electromagnetic resonators is one of the emerging frontiers of condensed matter physics. We sh…
Capacitance and conductance oscillations from electron tunneling into high energy levels of a quantum well in a p-i-n diode
S. Parolo, M. Lupatini, E. Külah +3
Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer dis…
In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling
P. Scarlino, J. H. Ungerer, D. J. van Woerkom +10
Semiconductor quantum dots, where electrons or holes are isolated via electrostatic potentials generated by surface gates, are promising building blocks for semiconductor-based qua…
Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
Jan Scharnetzky, Philipp Baumann, Christian Reichl +3
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy…
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
Elcin Külah, Christian Reichl, Jan Scharnetzky +3
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is…
Quantum simulation of antiferromagnetic Heisenberg chain with gate-defined quantum dots
C. J. van Diepen, T. -K. Hsiao, U. Mukhopadhyay +3
Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard…
Local signatures of electron-electron scattering in an electronic cavity
Carolin Gold, Beat A. Bräm, Richard Steinacher +7
We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a q…