108 citations · 192 across the 7 of their papers we have counts for
Showing cond-mat.mes-hallShow all
3 papers · 1 filter
cond-mat.mes-hall2021★ 14 cited
Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots
Jeffrey Schuster, Johannes Aberl, Lada Vukušić +5
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band ga…
cond-mat.mes-hall2015★ 108 cited
Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si
M. Grydlik, F. Hackl, H. Groiss +6
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectroni…
cond-mat.mes-hall2012★ 17 cited
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
P. Klenovský, M. Brehm, V. Křápek +7
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The…