108 citations · 192 across the 7 of their papers we have counts for
7 papers
Single SiGe Quantum Dot Emission Deterministically Enhanced in a High-Q Photonic Crystal Resonator
Thanavorn Poempool, Johannes Aberl, Marco Clementi +9
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) a…
Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots
Jeffrey Schuster, Johannes Aberl, Lada Vukušić +5
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band ga…
Light-emission from ion-implanted group-IV nanostructures
Moritz Brehm
Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics wit…
Free-running Sn precipitates: an efficient phase separation mechanism for metastable GeSn epilayers
Heiko Groiss, Martin Glaser, Magdalena Schatzl +5
We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence o…
Local Density-of-States Mapping in Photonic Crystal Resonators by Deterministically Positioned Germanium Quantum Dots
Magdalena Schatzl, Florian Hackl, Martin Glaser +6
We report on mapping of the local density of states in L3 photonic crystal resonators (PCR) via deterministically positioned single Ge quantum dots (QDs). Perfect site-control of G…
Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si
M. Grydlik, F. Hackl, H. Groiss +6
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectroni…
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
P. Klenovský, M. Brehm, V. Křápek +7
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The…