Q. Campbell

activity

20242026

most citedFirst principles band structure of interacting phosphorus and boron/aluminum

I^´

-doped layers in silicon

1 citations · 1 across the 1 of their papers we have counts for

collaborators

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4 papers · 1 filter

cond-mat.mtrl-sci2026★ 1 cited

First principles band structure of interacting phosphorus and boron/aluminum $I^´$ -doped layers in silicon

Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1

Silicon can be heavily doped with phosphorus in a single atomic layer (a $I^´$ layer), significantly altering the electronic structure of the conduction bands within the material. R…

cond-mat.mtrl-sci2025

First-principles dissociation pathways of BCl $_{3}$ on the Si(100)-2 $\times$ 1 surface

Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie

One of the most promising acceptor precursors for atomic-precision $I^´$ -doping of silicon is BCl $_{3}$ . The chemical pathway, and the resulting kinetics, through which BCl $_{3}$ adsorb…

cond-mat.mtrl-sci2024

Direct measurement of 2DEG states in shallow Si:Sb $I^´$ -layers

Frode S. Strand, Simon P. Cooil, Quinn T. Campbell +13

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $I^´$ -layers. We show that, in spite of the known challenges in produ…

cond-mat.mtrl-sci2024

Voltage dependent first-principles barriers to Li transport within Li ion battery Solid Electrolyte Interphases

Quinn T. Campbell

Charging a Li ion battery requires Li ion transport between the cathode and the anode. This Li ion transport is dependent upon (among other factors) the electrostatic environment t…

First principles band structure of interacting phosphorus and boron/aluminum I^´-doped layers in silicon

First-principles dissociation pathways of BCl3​ on the Si(100)-2×1 surface

Direct measurement of 2DEG states in shallow Si:Sb I^´-layers

Voltage dependent first-principles barriers to Li transport within Li ion battery Solid Electrolyte Interphases

First principles band structure of interacting phosphorus and boron/aluminum $I^´$ -doped layers in silicon

First-principles dissociation pathways of BCl $_{3}$ on the Si(100)-2 $\times$ 1 surface

Direct measurement of 2DEG states in shallow Si:Sb $I^´$ -layers