Q. Campbell

activity

20242026

collaborators

5 papers

cond-mat.mtrl-sci2026

First principles band structure of interacting phosphorus and boron/aluminum $I^´$ -doped layers in silicon

Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1

Silicon can be heavily doped with phosphorus in a single atomic layer (a $I^´$ layer), significantly altering the electronic structure of the conduction bands within the material. R…

quant-ph2025

Optimizing Temperature Distributions for Training Neural Quantum States using Parallel Tempering

Conor Smith, Quinn T. Campbell, Tameem Albash

Parameterized artificial neural networks (ANNs) can be very expressive ansatzes for variational algorithms, reaching state-of-the-art energies on many quantum many-body Hamiltonian…

cond-mat.mtrl-sci2025

First-principles dissociation pathways of BCl $_{3}$ on the Si(100)-2 $\times$ 1 surface

Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie

One of the most promising acceptor precursors for atomic-precision $I^´$ -doping of silicon is BCl $_{3}$ . The chemical pathway, and the resulting kinetics, through which BCl $_{3}$ adsorb…

quant-ph2025

Roadmap on Atomic-scale Semiconductor Devices

Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…

cond-mat.mtrl-sci2024

Direct measurement of 2DEG states in shallow Si:Sb $I^´$ -layers

Frode S. Strand, Simon P. Cooil, Quinn T. Campbell +13

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $I^´$ -layers. We show that, in spite of the known challenges in produ…

First principles band structure of interacting phosphorus and boron/aluminum I^´-doped layers in silicon

Optimizing Temperature Distributions for Training Neural Quantum States using Parallel Tempering

First-principles dissociation pathways of BCl3​ on the Si(100)-2×1 surface

Roadmap on Atomic-scale Semiconductor Devices

Direct measurement of 2DEG states in shallow Si:Sb I^´-layers

First principles band structure of interacting phosphorus and boron/aluminum $I^´$ -doped layers in silicon

First-principles dissociation pathways of BCl $_{3}$ on the Si(100)-2 $\times$ 1 surface

Direct measurement of 2DEG states in shallow Si:Sb $I^´$ -layers