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20122025
most citedCurrent-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

317 citations · 1.2k across the 23 of their papers we have counts for

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physics.app-ph2019★ 29 cited

Thermal Brownian Motion of Skyrmion for True Random Number Generation

Yong Yao, Xing Chen, Wang Kang +2

The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers g…

physics.app-ph2019★ 72 cited

Stochastic Computing Implemented by Skyrmionic Logic Devices

Haoyang Zhang, Daoqian Zhu, Wang Kang +2

Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depi…

physics.app-ph2019★ 20 cited

Universal transfer and stacking technique of van der Waals heterostructures for spintronics

Yuan Cao, Xinhe Wang, Xiaoyang Lin +5

The key to achieving high-quality van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the control over clean and flexible interfaces. How…

physics.app-ph2019★ 7 cited

Magnetic skyrmion spectrum under voltage excitation and its linear modulation

Xing Chen, Wang Kang, Daoqian Zhu +5

Magnetic skyrmions are topological quasiparticles with great potential for applications in future information storage and processing devices because of their nanoscale size, high s…

physics.app-ph2018★ 4 cited

Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques

Mengxing Wang, Wenlong Cai, Daoqian Zhu +11

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…

physics.app-ph2018★ 1 cited

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Shouzhong Peng, Xiang Li, Wang Kang +7

Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…

physics.app-ph2018★ 63 cited

Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device

Yizheng Liu, Na Lei, Chengxiang Wang +7

Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion m…

physics.app-ph2018

Ultra-Fast Ferrimagnetic All Spin Logic Device

Yue Zhang, Zhizhong Zhang, Zhenyi Zheng +7

All spin logic device (ASLD) blazes an alternative path for realizing ultra-low power computing in the Post-Moore era. However, initial device structure relying on ferromagnetic in…

physics.app-ph2017★ 317 cited

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Mengxing Wang, Wenlong Cai, Kaihua Cao +11

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…