317 citations · 1.2k across the 23 of their papers we have counts for
24 papers
Triple-Q state in magnetic breathing kagome lattice
Hangyu Zhou, Manuel dos Santos Dias, Shijian Bao +4
Magnetic frustration in two-dimensional spin lattices with triangular motifs underpins a series of exotic states, ranging from multi-Q configurations to disordered spin-glasses. Th…
Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride
Hangyu Zhou, Manuel dos Santos Dias, Youguang Zhang +2
The kagome lattice is an exciting solid state physics platform for the emergence of nontrivial quantum states driven by electronic correlations: topological effects, unconventional…
NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration
Yinglin Zhao, Jianlei Yang, Bing Li +7
The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing "power wall" and "memory wall" prob…
Thermal Brownian Motion of Skyrmion for True Random Number Generation
Yong Yao, Xing Chen, Wang Kang +2
The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers g…
Stochastic Computing Implemented by Skyrmionic Logic Devices
Haoyang Zhang, Daoqian Zhu, Wang Kang +2
Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depi…
Universal transfer and stacking technique of van der Waals heterostructures for spintronics
Yuan Cao, Xinhe Wang, Xiaoyang Lin +5
The key to achieving high-quality van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the control over clean and flexible interfaces. How…
Frequency Modulation and Voltage Locking of the Voltage Controlled Spin Oscillators (VCSOs)
Lang Zeng, Hao-Hsuan Chen, Deming Zhang +4
The oscillating frequency of typical Spin Torque Nano Oscillators (STNOs) can be modulated by injected DC current or bias magnetic field. And phase locking of STNOs to an external…
Magnetic skyrmion spectrum under voltage excitation and its linear modulation
Xing Chen, Wang Kang, Daoqian Zhu +5
Magnetic skyrmions are topological quasiparticles with great potential for applications in future information storage and processing devices because of their nanoscale size, high s…
Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques
Mengxing Wang, Wenlong Cai, Daoqian Zhu +11
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…
Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory
Shouzhong Peng, Xiang Li, Wang Kang +7
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…
Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device
Yizheng Liu, Na Lei, Chengxiang Wang +7
Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion m…
Ultra-Fast Ferrimagnetic All Spin Logic Device
Yue Zhang, Zhizhong Zhang, Zhenyi Zheng +7
All spin logic device (ASLD) blazes an alternative path for realizing ultra-low power computing in the Post-Moore era. However, initial device structure relying on ferromagnetic in…
First-principles investigation of magnetocrystalline anisotropy oscillations in CoFeAl/Ta heterostructures
Junfeng Qiao, Shouzhong Peng, Youguang Zhang +2
We report first-principles investigations of magnetocrystalline anisotropy energy (MCAE) oscillations as a function of capping layer thickness in Heusler alloy Co\textsubscript{2}F…
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…
Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance
Lang Zeng, Tianqi Gao, Deming Zhang +6
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability…
A gate-variable spin current demultiplexer based on graphene
Li Su, Xiaoyang Lin, Youguang Zhang +5
Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to…
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
Jiaqi Zhou, Weisheng Zhao, Yin Wang +8
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tun…
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Shouzhong Peng, Weisheng Zhao, Junfeng Qiao +8
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM).…
Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory
Wang Kang, Yangqi Huang, Chentian Zheng +6
Magnetic skyrmion, vortex-like swirling topologically stable spin configurations, is appealing as information carrier for future nanoelectronics, owing to the stability, small size…
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
Shouzhong Peng, Mengxing Wang, Hongxin Yang +9
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in ST…
Current-limiting challenges for all-spin logic devices
Li Su, Youguang Zhang, Jacques-Olivier Klein +4
All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memor…
Laxity-Based Opportunistic Scheduling with Flow-Level Dynamics and Deadlines
Huasen Wu, Youguang Zhang, Xin Liu
Many data applications in the next generation cellular networks, such as content precaching and video progressive downloading, require flow-level quality of service (QoS) guarantee…
Fast Adaptive S-ALOHA Scheme for Event-driven M2M Communications (Journal version)
Huasen Wu, Chenxi Zhu, Richard J. La +2
Supporting massive device transmission is challenging in Machine-to-Machine (M2M) communications. Particularly, in event-driven M2M communications, a large number of devices activa…
Fast Adaptive S-ALOHA Scheme for Event-driven Machine-to-Machine Communications
Huasen Wu, Chenxi Zhu, Richard J. La +2
Machine-to-Machine (M2M) communication is now playing a market-changing role in a wide range of business world. However, in event-driven M2M communications, a large number of devic…