27 citations · 116 across the 25 of their papers we have counts for
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Topics in Present-Day Science Technology and Innovation: Ultrafast Relaxation Processes in Semiconductors
Clóves Gonçalves Rodrigues, Áurea Rosas Vasconcellos, Roberto Luzzi
The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Ph…
Intermolecular Correlations and Mean Square Relative Displacements in C60 Fullerite
Viatcheslav Ivanovich Zubov, Clóves Gonçalves Rodrigues
We study molecular properties of the high-temperature modification of fullerites. In the present work we calculate the intermolecular correlations and the mean square relative disp…
On a Possible Melting Curve of C60 Fullerite
Clóves Gonçalves Rodrigues
We study the thermodynamic properties of the high-temperature modification of fullerites on the basis of the Girifalco intermolecular potential. In the present work, using Lindeman…
Hot Electron Dynamics in Zincblende and Wurtzite GaN
Clóves Gonçalves Rodrigues, Valder N. Freire, Áurea R. Vasconcellos +1
A theoretical investigation of the excess energy dissipation of highly excited photoinjected electrons in both wurtzite and zincblende GaN is presented. The calculations are perfor…
Anisotropic Hole Drift Velocity in 4H-SiC
Jackelinne L. Vasconcelos, Clóves Gonçalves Rodrigues, Roberto Luzzi
A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on…
Mobility in N-Doped Wurtzite III-Nitrides
Clóves Gonçalves Rodrigues, Valder N. Freire, Áurea R. Vasconcellos +1
A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems, driven far away from eq…
Electron transport in GaN(ZB) and AlN(WZ)
Clóves Gonçalves Rodrigues
Seeking a better understanding of the electron transport in n-doped zinc blende GaN and wurtzite AlN, it was performed here a theoretical study resorting to Non Equilibrium Statist…
Hot-Carrier Relaxation in Photoinjected ZnSe
Clóves Gonçalves Rodrigues
A theoretical investigation of the excess energy dissipation of highly excited photoinjected carriers in zinc selenide (ZnSe) is presented. The calculations are performed by solvin…
Electron mobility in n-doped zinc sulphide
Clóves Gonçalves Rodrigues
A study of the mobility of n-doped wurtzite and zincblende ZnS is reported. We have determined nonequilibrium thermodynamic state of the ZnS, driven far away from equilibrium by a…
Interatomic Correlations Moments of Atoms in the Two-Dimensional Hexagonal Lattice by Using Morse and Lenard-Jones Potentials
Clóves Gonçalves Rodrigues
In this work we investigate the interatomic correlation moments in two-dimensional model of a weakly anharmonic crystal (i.e., not very high temperatures) with hexagonal lattice, u…
Anisotropic Carrier Transport in n-Doped 6H-SiC
Ricardo Tadeu Ferracioli, Clóves Gonçalves Rodrigues, Roberto Luzzi
In this paper, a study is presented on the charge transport in n-type doped semiconductor 6H-SiC (in both transient and steady state) using a nonequilibrium quantum kinetic theory…
Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison
Clóves Gonçalves Rodrigues
This communication presents a comparative study on the charge transport (in transient and steady state) in bulk n-type doped SiC-polytypes: 3C-SiC, 4H-SiC and 6H-SiC. The time evol…
Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs
Clóves Gonçalves Rodrigues, Roberto Luzzi
In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) an…