Electron transport in GaN(ZB) and AlN(WZ)

Abstract

Seeking a better understanding of the electron transport in n-doped zinc blende GaN and wurtzite AlN, it was performed here a theoretical study resorting to Non Equilibrium Statistical Operator Method, which provides a set of coupled nonlinear differential evolution equations that provides a description of the dissipative phenomena developed in the system. The ultrafast time evolution (and the steady-state) of the electron drift velocity is obtained assuming different values for the electron effective mass.

arXiv admin note: text overlap with arXiv:2108.00863

Cited by in corpus (1)

• Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs