output
20032023
most citedTeleportation of entangled states without Bell-state measurement

75 citations

32 papers

cond-mat.mtrl-sci2023

Electronic Transport in the Silicon Carbide Semiconductor in Phase 3C

Amanda M. D. Corrêa, Clóves Gonçalves Rodrigues

In this work we study, theoretically, electronic mobility of the silicon carbide semiconductor in the 3C phase, named 3C-SiC. 3C-SiC has shown great potential for applications in e…

physics.gen-ph2022★ 3 cited

The Relativistic Maxwell-Jüttner Velocity Distribution Function

Gilberto Jonas Damião, Clóves Gonçalves Rodrigues

In this paper, the expression of the relativistic Maxwell-Jüttner velocity distribution was deduced in a detailed and didactic way. This distribution was compared with the well-kno…

physics.gen-ph2021★ 3 cited

About the Evolution of the Concept of Heat and Thermal Energy

Lucas Matheus Alves Gontijo, Clóves Gonçalves Rodrigues

The concept of thermal energy was only fully formulated in the late 19th and early 20th centuries. The search for the understanding of calorific phenomena was what provided the con…

cond-mat.mtrl-sci2021

Topics in Present-Day Science Technology and Innovation: Ultrafast Relaxation Processes in Semiconductors

Clóves Gonçalves Rodrigues, Áurea Rosas Vasconcellos, Roberto Luzzi

The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Ph…

cond-mat.mtrl-sci2021

Intermolecular Correlations and Mean Square Relative Displacements in C60 Fullerite

Viatcheslav Ivanovich Zubov, Clóves Gonçalves Rodrigues

We study molecular properties of the high-temperature modification of fullerites. In the present work we calculate the intermolecular correlations and the mean square relative disp…

cond-mat.mtrl-sci2021★ 9 cited

Anisotropic Hole Drift Velocity in 4H-SiC

Jackelinne L. Vasconcelos, Clóves Gonçalves Rodrigues, Roberto Luzzi

A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on…