activity
19992021
most citedHigher-Order Generalized Hydrodynamics of Carriers and Phonons in Semiconductors in the Presence of Electric Fields: Macro to Nano

11 citations · 60 across the 25 of their papers we have counts for

collaborators

25 papers

physics.soc-ph2021★ 1 cited

Science, Technology and Non Equilibrium Statistical Mechanics

Clóves Gonçalves Rodrigues, Roberto Luzzi

The binomial Science & Technology (S & T) is inseparable. In this contribution are presented some general considerations on the question of the aspect and interrelationships of the…

cond-mat.mtrl-sci2021

Topics in Present-Day Science Technology and Innovation: Ultrafast Relaxation Processes in Semiconductors

Clóves Gonçalves Rodrigues, Áurea Rosas Vasconcellos, Roberto Luzzi

The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Ph…

cond-mat.mtrl-sci2021

Hot Electron Dynamics in Zincblende and Wurtzite GaN

Clóves Gonçalves Rodrigues, Valder N. Freire, Áurea R. Vasconcellos +1

A theoretical investigation of the excess energy dissipation of highly excited photoinjected electrons in both wurtzite and zincblende GaN is presented. The calculations are perfor…

cond-mat.mtrl-sci2021★ 9 cited

Anisotropic Hole Drift Velocity in 4H-SiC

Jackelinne L. Vasconcelos, Clóves Gonçalves Rodrigues, Roberto Luzzi

A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on…

cond-mat.mtrl-sci2021

Mobility in N-Doped Wurtzite III-Nitrides

Clóves Gonçalves Rodrigues, Valder N. Freire, Áurea R. Vasconcellos +1

A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems, driven far away from eq…

cond-mat.mtrl-sci2021★ 2 cited

Anisotropic Carrier Transport in n-Doped 6H-SiC

Ricardo Tadeu Ferracioli, Clóves Gonçalves Rodrigues, Roberto Luzzi

In this paper, a study is presented on the charge transport in n-type doped semiconductor 6H-SiC (in both transient and steady state) using a nonequilibrium quantum kinetic theory…