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J. Lähnemann

19 papers hereh-index 211.6k citations108 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author3
  • middle author13
  • last author1

Across the 17 of 19 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci12
  • cond-mat.mes-hall5
  • physics.app-ph2
same name
  • J. Lähnemann — 15 papers, h 0

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20122024
most citedLattice parameters of Scx​Al1−x​N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

62 citations · 169 across the 7 of their papers we have counts for

collaborators
Showing 2017Show all

2 papers · 1 filter

physics.app-ph2017★ 45 cited

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

Maria Spies, Martien I. Den Hertog, Pascal Hille +6

We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such…

cond-mat.mtrl-sci2017

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

C. Chèze, F. Feix, J. Lähnemann +6

N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…

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