29 citations · 93 across the 8 of their papers we have counts for
4 papers · 1 filter
Grain Boundary Resistance in Copper Interconnects from an Atomistic Model to a Neural Network
Daniel Valencia, Evan Wilson, Zhengping Jiang +3
Orientation effects on the resistivity of copper grain boundaries are studied systematically with two different atomistic tight binding methods. A methodology is developed to model…
Surface Passivation in Empirical Tight Binding
Yu He, Yaohua Tan, Zhengping Jiang +3
Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that expli…
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +4
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and th…
Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells
Zhengping Jiang, Neerav Kharche, Timothy Boykin +1
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This wor…